SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DATA SHEET
Document No. P10357EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1985©
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic.
FEATURES
•Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 8.0 dB TYP. @V
CE
= 10 V,
I
C
= 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., G
a
= 9.0 dB TYP. @V
CE
= 10 V,
I
C
= 40 mA, f = 1.0 GHz
•Large P
T
in Small Package
P
T
: 2 W with 16 cm
2
×
0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Collector to Base Voltage V
CBO
20 V
Collector to Emitter Voltage V
CEO
12 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
100 mA
Total Power Dissipation P
T
* 1.2 W
Thermal Resistance R
th(j-a)
* 62.5
°
C/W
Junction Temperature T
j
150
°
C
Storage Temperature T
stg
−
65 to +150
°
C
* mounted on 16 cm
2
×
0.7 mm Ceramic Substrate
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
−0.03
+0.05
0.47
±0.06
0.42±0.06
4.5±0.1
1.6±0.2
3.0
EB
C
1.5
0.8 MIN.
2.5±0.1
4.0±0.25
1.5±0.1
0.42
±0.06