R09DS0021EJ0300 Rev.3.00 Page 1 of 7
Jun 28, 2011
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PreliminaryData Sheet
2SC3356
NPN Silicon RF Transistor
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
FEATURES
• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High power gain : MAG = 13 dB TYP. @ V
CE = 10 V, IC = 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
2SC3356 2SC3356-A 50 pcs (Non reel) • 8 mm wide embossed taping
2SC3356-T1B 2SC3356-T1B-A
3-pin Minimold
(Pb-Free)
3 kpcs/reel • Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation Ptot
Note
200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0021EJ0300
Rev.3.00
Jun 28, 2011
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