Any changing of specification will not be informed individual
2SC3052
NPN
Silicon
Plastic-Encapsulate Transistor
FEATURES
http://www.SeCoSGmbH.com
ELECTRICAL CHARACTERISTICS (Tamb =25 C unless o
o
therwise specified)
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=100µ A, I
E
=0
50 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 100µA, I
B
=0 50 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 100µA, I
C
=0
6 V
V
V
Collector cut-off current
I
CBO
V
CB
= 50 V , I
E
=0 0.1
µA
Emitter cut-off current
I
EBO
V
EB
= 6V , I
C
=0 0.1
µA
DC current gain
h
FE(2)
h
FE(1)
V
CE
= 6V, I
C
= 1mA
V
CE
= 6V, I
C
= 0.1mA
150
50
800
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
I
C
= 100mA, I
B
= 10mA
I
C
= 100mA, I
B
= 10mA
0.3
Base-emitter saturation voltage
1
Transition frequency
f
T
V
CE
=6V , I
C
= 10mA 180 M
C
ob
V
CE
=6V, I
E
= 0, f= 1 MHz 4 pF
Hz
N
Collector output capacitance
oise figure
NF
V
CE
=6V, I
E
= -0.1mA, f = 1KHz
RG=2KΩ
15 dB
CLASSIFICATION OF h
FE
Marking
E F G
LE LF LG
Rank
Range
150-300 250-500 400-800
Elektronische Bauelemente
0.2
150
mW
I
C
Collector Current -Continuous
A
MAXIMUM RATINGS* T
A
=25 unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
50
50
6
T
J
, T
stg
Junction and Storage Temperature
-55~125125,
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
P
C
Collector Dissipation
V
V
V
C
C
o
o
01-Jun-2002 Rev. A
Page 1 of 3
Excellent
linearity
of
DC
forward
current
gain
Low
collector
to
emitter
saturation
voltage
VCE(sat)
=
0.3V
max
(@IC=100mA,
IB=10mA)
RoHS Compliant Product
n
n
K
J
C
H
L
A
B
S
GV
3
1
2
D
Top View
1.BASE
2.EMITTER
3.COLLECTOR
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
SOT-23
n
A suffix of "-C" specifies halogen & lead-free
