DATA SHEET
SILICON TRANSISTOR
2SC2954
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DATA SHEET
Document No. P10405EJ3V0DS00 (3rd edition)
(Previous No. TC-1458A)
Date Published March 1997 N
Printed in Japan
1994©
DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for
low noise wide band amplifier and buffer amplifier of OSC, for VHF
and CATV bnad.
FEATURES
• Low Noise and High Gain.
f = 200 MHz, 500 MHz
NF: 2.3 dB, 2.4 dB
S
21
e : 20 dB, 12.5 dB
• Large P
T
in Small Package.
P
T
: 2 W with 16 cm
2
0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage V
CBO
35 V
Collector to Emitter Voltage V
CEO
18 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
150 mA
Total Power Dissipation P
T
* 2.0 W
Termal Resistance R
th(j-a)
* 62.5 C/W
Junction Temperature T
j
150 C
Storage Temperature T
stg
65 to +150 C
* With 16 cm
2
0.7 mm
Ceramic Substrate
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
−0.03
+0.05
0.47
±0.06
0.42±0.06
4.5±0.1
1.6±0.2
3.0
EB
C
1.5
0.8 MIN.
2.5±0.1
4.0±0.25
1.5±0.1
0.42
±0.06