2SC2715
0.05A , 35V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
14-Mar-2011 Rev. A
Page 1 of 4
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Power Gain
Recommended for FM IF,OSC Stage and AM CONV.
IF Stage.
CLASSIFICATION OF h
FE
Product-Rank 2SC2715-R 2SC2715-O 2SC2715-Y
Range 40~80 70~140 120~240
Marking RR1 RO1 RY1
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-23 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
35 V
Collector to Emitter Voltage V
CEO
30 V
Emitter to Base Voltage V
EBO
4 V
Collector Current - Continuous I
C
50 mA
Collector Power Dissipation P
C
350 mW
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Collector to Base Breakdown Voltage V
(BR)CBO
35 - - V I
C
=10μA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
30 - - V I
C
=1mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
4 - - V I
E
=10μA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.1 μA V
CB
=35V, I
E
=0
Emitter Cut-Off Current I
EBO
- - 0.1 μA V
EB
=4V, I
C
=0
DC Current Gain h
FE
40 - 240 V
CE
=12V, I
C
=2mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - 0.4 V I
C
=10mA, I
B
=1mA
Base to Emitter Saturation Voltage V
BE(sat)
- - 1 V I
C
=10mA, I
B
=1mA
Transition Frequency f
T
100 - 400 MHz V
CE
=10V, I
C
=1mA
Power Gain Gpe 27 - 33 dB V
CE
=6V, I
C
=1mA, f=10.7MHz
SOT-23
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
REF.
Millimete
REF.
Millimete
Min. Max. Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50