Any changing of specification will not be informed individual
2SC2411
NPN Transistor
Plastic-Encapsulate Transistors
P
n
n
RoHS Compliant Product
ower Dissipation
PCM: 200 mW ( Tamb= 25 C)
o
FEATURES
Collector
MAXIMUM RATINGS* T
A
=25 unless otherwise noted
Symbol Parameter Value Units
Base
Emitter
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
SOT-23
K
J
C
H
L
A
B
S
GV
3
1
2
D
Top View
http://www.SeCoSGmbH.com
Elektronische Bauelemente
1
2
3
V
CBO
Collector-Base Voltage
40 V
V
CEO
Collector-Emitter Voltage
32 V
V
EBO
Emitter-Base Voltage
5 V
I
C
Collector Current -Continuous 500 mA
P
C
Collector Dissipation 200 mW
T
J
, T
stg
Junction and Storage Temperature -55-150 ℃
01-Jun-2002 Rev. A
Page 1 of
2
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=100µA,I
E
=0 40
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=1mA,I
B
=0 32
V
Emitter-base breakdow n voltage
V
(BR)EBO
I
E
=100µA,I
C
=0 5
V
Collector cut-off current
I
CBO
V
CB
=20V,I
E
=0
1
µA
Emitter cut-off current
I
EBO
V
EB
=4V,I
C
=0
1
µA
DC current gain
h
FE
V
CE
=3V,I
C
=100mA 82
390
Collector-emitter saturation voltage
V
CE(sat)
I
C
=500mA,I
B
=50mA
0.4
V
Transition frequency
f
T
V
CE
=5V,I
C
=20mA,f=100MHz
250
MHz
Collector output capacitance
C
ob
V
CB
=10V,I
E
=0,f=1MHz
6.0
pF
CLASSIFICATION OF h
FE
Rank
P Q R
Range
82-180 120-270 180-390
Marking
CP CQ CR
A suffix of "-C" specifies halogen & lead-free
