SILICON TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. P10350EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1984©
FEATURES
•NF 1.5 dB TYP. @ f = 1.0 GHz
•MAG 14 dB TYP. @ f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Collector to Base Voltage V
CBO
25 V
Collector to Emitter Voltage V
CEO
12 V
Emitter to Base Voltage V
EBO
3.0 V
Collector Current I
C
70 mA
Total Power Dissipation P
T
250 mW
Junction Temperature T
j
150 °C
Storage Temperature T
stg
−65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I
CBO
0.1
µ
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current I
EBO
0.1
µ
A
V
EB
= 2.0 V, I
C
= 0
DC Current Gain h
FE
40 200 V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product f
T
4.5 GHz V
CE
= 10 V, I
C
= 20 mA
Output Capacitance C
ob
0.75 1.0 pF V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21
e
2
911 dBV
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure NF 1.5 3.0 dB V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
Maximum Available Gain MAG 14 dB V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
h
FE
Classification
Class E/P * F/Q *
Marking R2 R3
h
FE
40 to 120 100 to 200 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.21.1 to 1.4
0 to 0.1
0.950.3 0.95
0.4
+0.1
−0.05
0.4
+0.1
−0.05
0.16
+0.1
−0.06
0.65
+0.1
−0.15