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1998©
Document No. D14861EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC2335
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
DATA SHEET
2002
The 2SC2335 is a mold power transistor developed for high-speed
high-voltage switching, and is ideal for use as a driver in devices such
as switching regulators, DC/DC converters, and high-frequency power
amplifiers.
FEATURES
• Low collector saturation voltage: V
CE(sat)
= 1.0 V MAX. @I
C
= 3.0 A
• Fast switching speed: t
f
= 1.0
µ
s MAX. @I
C
= 3.0 A
• Wide base reverse-bias SOA: VCEX(SUS)1
= 450 V MIN. @I
C
= 3.0 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
500 V
Collector to emitter voltage V
CEO
400 V
Emitter to base voltage V
EBO
7.0 V
Collector current (DC) I
C(DC)
7.0 A
Collector current (pulse) I
C(pulse)
PW ≤ 300
µ
s,
duty cycle ≤ 10%
15 A
Base current (DC) I
B(DC)
3.5 A
T
C
= 25°C
40 W
Total power dissipation P
T
T
A
= 25°C
1.5 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
ORDERING INFORMATION
Part No. Package
2SC2335 TO-220AB
(TO-220AB)
