2SC2274
0.5 A , 60 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
21-Feb-2011 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
A
CE
K
F
D
B
G
H
J
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Breakdown Voltage
High Current
Low Saturation Voltage
CLASSIFICATION OF h
FE(1)
Product-Rank 2SC2274-D 2SC2274-E 2SC2274-F
Range 60~120 100~200 160~320
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
60 V
Collector to Emitter Voltage V
CEO
50 V
Emitter to Base Voltage V
EBO
5 V
Collector Current - Continuous I
C
0.5 A
Collector Power Dissipation P
C
600 mW
Thermal Resistance From Junction To Ambient R
θJA
208 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V
(BR)CBO
60 - - V I
C
=0.01mA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
50 - - V I
C
=1mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
5 - - V I
E
=0.01mA, I
C
=0
Collector Cut – Off Current I
CBO
- - 1 μA V
CB
=40V, I
E
=0
Emitter Cut – Off Current I
EBO
- - 1 μA V
EB
=4V, I
C
=0
DC Current Gain
h
FE(1)
60 - 320
V
CE
=5V, I
C
=50mA
h
FE(2)
*
35 - - V
CE
=5V, I
C
=400mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - 0.6 V I
C
=400mA, I
B
=40mA
Base to Emitter voltage V
BE(sat)
- - 1.2 V I
C
=400mA, I
B
=40mA
Transition Frequency f
T
- 120 - MHz V
CE
=10V, I
C
=10mA
Collector Output Capacitance C
ob
- 5 - pF V
CB
=10V, f=1MHz
Emitte
Collector
Base
TO-92
REF.
Millimeter
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 -
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76
