2SC1654
0.05A , 180V
NPN Epitaxial Planar Transistor
Elektronische Bauelemente
18-Feb-2011 Rev. B
Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
High Frequency Power Amplifier Application
Power Switching Applications
CLASSIFICATION OF h
FE(1)
Product-Rank 2SC1654-N5 2SC1654-N6 2SC1654-N7
Range 90~180 135~270 200~400
Marking Code N5 N6 N7
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-23 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
180 V
Collector to Emitter Voltage V
CEO
160 V
Emitter to Base Voltage V
EBO
5 V
Collector Current - Continuous I
C
50 mA
Collector Power Dissipation P
C
150 mW
Thermal Resistance From Junction To Ambient R
θJA
833 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55 ~ 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V
(BR)CBO
180 - - V I
C
=100μA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
160 - - V I
C
=1mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
5 - - V I
E
=100μA, I
C
=0
Collector Cut-Off Current I
CBO
- - 0.1 μA V
CB
=130V, I
E
=0
Emitter Cut-Off Current I
EBO
- - 0.1 μA V
EB
=5V, I
C
=0
DC Current Gain
h
FE(1)
90 - 400
V
CE
=3V, I
C
=15mA
h
FE(2)
70 - - V
CE
=3V, I
C
=1mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - 0.3 V I
C
=50mA, I
B
=5mA
Base to Emitter Saturation Voltage V
BE(sat)
- - 1 V I
C
=50mA, I
B
=5mA
Transition Frequency f
T
- 120 - MHz V
CE
=10V, I
C
=10mA
Collector Output Capacitance C
ob
- 2.3 - pF V
CB
=10V, I
E
=0, f=1MHz
SOT-23
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
REF.
Millimete
REF.
Millimete
Min. Max. Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
