Elektronische Bauelemente
2SC1623
150 mA, 60 V
NPN Epitaxial Planar Transistor
01-June-2002 Rev. A Page 1 of 2
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
DESCRIPTION
The 2SC1623 is designed for use driver stage of AF amplifier and general purpose application.
PACKAGE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
60 V
Collector to Emitter Voltage V
CEO
50 V
Emitter to Base Voltage V
EBO
5 V
Collector Currrent I
C
150 mA
Total Power Dissipation Pd 250 mW
Junction, Storage Temperature T
J
, T
STG
+150, -55 ~ +150 ℃
CHARACTERISTICS at Ta = 25°C
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V IC=100uA
BVCEO 50 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 100 nA VCB=60V
IEBO - - 100 nA VEB=5V
*VCE(sat) - - 250 mV IC=100mA, IB=10mA
*VBE(sat)1 - - 1.0 V IC=100mA, IB=10mA
*hFE1 90 - 600 VCE=6V, IC=1mA
*hFE2 25 - - VCE=6V, IC=150mA
*hFE3 80 - - VCE=1V, IC=10mA
fT 80 - - MHz VCE=10V, IC=1mA, f=100MHz
Cob - - 3.5 pF VCB=10V, f=1MHz, IE=0A
* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
CLASSIFICATION OF h
FE
1
Rank P Y G B
Range 90 - 180 135 - 270 200 - 400 300 - 600
EMITTER
Dim Min Max
A 2.70 3.10
B 1.30 1.70
C 1.00 1.30
D 0.35 0.50
G
1.90 REF.
H 0.00 0.10
J 0.10 0.26
K 0.20
0.60
L 1.25 1.65
S 2.25 3.00
All Dimension in mm
SC-59
S
G
D
B
L
A
1
3
2
Top View
H
C
J
K
BASE
COLLECTOR
