Elektronische Bauelemente
2SC1623K
150 A, 60 V
NPN Epitaxial Planar Transistor
01-June-2002 Rev. A Page 1 of 3
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
DESCRIPTION
The 2SC1623K is designed for use in
driver stage of AF amplifier and
general purpose application.
PACKAGE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
60 V
Collector to Emitter Voltage V
CEO
50 V
Emitter to Base Voltage V
EBO
5 V
Collector Currrent I
C
100
mA
Total Power Dissipation Pc 200 mW
Junction, Storage Temperature T
J
, T
STG
+150, -55 ~ +150 ℃
CHARACTERISTICS at Ta = 25°C
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V I
C
=100uA
BVCEO 50 - - V I
C
=1mA
BVEBO 5 - - V I
E
=100uA
ICBO - - 100 nA V
CB
=60V
IEBO - - 100 nA V
EB
=5V
*VCE
(sat)
- - 300 mV I
C
=100mA, I
B
=10mA
*VBE
(sat)1
- - 1.0 V I
C
=100mA, I
B
=10mA
*h
FE1
90 - 600 V
CE
=6V, I
C
=1mA
fT - 250 - MHz V
CE
=6V, I
C
=10mA
* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
CLASSIFICATION OF h
FE
1
Rank P Y G B
Range 90 - 180 135 - 270 200 - 400 300 - 600
Marking L4 L5 L6 L7
Collector
Base
Emitter
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
SOT-23
K
J
C
H
L
A
B
S
GV
3
1
2
D
Top View
1
2
3
