2SB834
-3A , -60V
PNP Plastic-Encapsulated Transistor
Elektronische Bauelemente
14-Aug-2012 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
2
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
CLASSIFICATION OF h
FE
Product-Rank
2SB834-O 2SB834-Y
Range
60~120 100~200
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
-60 V
Collector to Emitter Voltage V
CEO
-60 V
Emitter to Base Voltage V
EBO
-7 V
Collector Current - Continuous I
C
-3 A
Collector Power Dissipation P
C
2 W
Thermal resistance, junction to case R
θJC
4.16 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Condition
Collector to Base Breakdown Voltage V
(BR)CBO
-60 - - V I
C
= -1mA, I
E
=0
Collector to Emitter Breakdown Voltage
V
(BR)CEO
-60 - - V I
C
= -50mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
-7 - - V I
E
= -1mA, I
C
=0
Collector Cut – Off Current I
CBO
- - -100
µA V
CB
= -60V, I
E
=0
Emitter Cut – Off Current I
EBO
- - -100
µA V
EB
= -7V, I
C
=0
DC Current Gain h
FE
60 - 200
V
CE
= -5V, I
C
= -500mA
20 - - V
CE
= -5V, I
C
= -3A
Collector to Emitter Saturation Voltage V
CE(sat)
- - -1 V I
C
= -3A, I
B
= -0.3A
Base to Emitter Saturation Voltage V
BE(sat)
- - -1 V V
CE
= -5V, I
C
= -0.5A
Transition Frequency f
T
5 - - MHz
V
CE
= -5V, I
C
= -500mA, f =1MHz
Turn-on Time t
ON
- 0.7 -
µs I
B1
= -I
B2
= -0.2A, I
C
=2A, V
CC
=30V Storage Time t
STG
- 2 -
Turn-off Time t
OFF
- 0.9 -
Note:
1. Pulse test.
ITO-220J
REF.
REF.
