-Jun-2002 Rev. A
Page 1 of 3
01
Elektronische Bauelemente
2SB772L
PNP Type
Epitaxial Transistors
Description
The 2SB772L os designed for using in output stage of
10W amplifier, voltage regulator, DC-DC converter and
relay driver.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
MAXIMUM RATINGS* (T
amb
=25 , unless otherwise specifie d)C
o
Symbol Parameter Value
Collector Current (DC)
-7
-5
10
55~+150
-30
-40
-3
IC
Tstg
TJ,
Junction and
Total Power Dissipation
V
EBO
PD
Emitter-Base Voltage
V
A
W
Storage Temperature
-
C
O
V
CEO
Collector-Emitter Voltage
V
V
CBO
Collector-Base Voltage
V
Units
Collector Current (Pulse)
IB Base Current
-0.6
A
G D S
5.3±
0.2
6.6±
0.2
7.0±
0.2
5.6±
0.2
7.0±
0.2
0.75±
0.15
0.5±
0.05
2.3±
0.1
1.2±
0.3
0.5±
0.1
0.6±
0.1
2.3REF.
TO-251
Dimensions in millimeters
Classification of hFE
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter Symbol Min
Typ.
Max
Uni
Test Conditions
Collector-Base Breakdown Voltage
BVCBO - - V
IC=-100µA,IE=0
IC=-1mA,IB=0
IE=-10µA,IC=0
VCB=-30V,IE=0
VEB=-
IC=-
VCE=- V, IC=
VCE=- V, IC=-0.1 mA,
VCB=-10 , f=1MHz,IE=0
, f=100MHz
BVCEO
-30
- - V
BVEBO
- - V
ICES - -
-1
uA
IEBO
-
-
uA
*VCE(sat)
-
-1
*VBE(sat)
V
*hFE1 -
*hFE2
500
fT
80
-
MH
Cob
-
-
pF
z
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
t
-40
-5
30
100
-1
-0.5
-2
55
V
3V,IC=0
2 A,IB=-0.2 A
2
-20mA
VCE=- V, IC=-
2
20mA
5
V
C
o
-0.3
-
-
-
-
*Pulse test: Pulse width 380 s, Duty Cycle 2%
µ
IC=-
2 A,IB=-0.2 A
Rank Q
R
S
100~200
250~500
160~320
Range
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
