Any changing of specification will not be informed individual
2SB766
PNP Silicon
Medium Power Transistor
RoHS Compliant Product
http://www.SeCoSGmbH.com
Elektronische Bauelemente
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
0.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
1.100
Min
0.055
0.013
0.014
0.014
0.173
0.055
0.091
0.155
0.114
0.035
Max
0.063
0.020
0.022
0.017
0.181
0.071
0.102
0.167
0.122
0.043
Dimensions In Millimeters Dimensions In Inches
0.060TYP
1.500TYP
D
D1
C
A
b
b1
E1
E
L
e
e1
SOT-89
1.BASE
2.COLLECTOR
3.EMITTER
FEATURES
Power dissipation
P
CM
: 500mW˄Tamb=2 5 ć˅
Collector current
ICM
:-1 A
Collector-base voltage
VB(BR)CBO
: -30 V
Operating and storage junction temperature range
TJ
ˈT
stg
: -55ć to +150ć
ELECTRICAL CHARACTERISTICS
Tamb=25
unlessotherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
-10PA, I
E
=0 -30
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
-2mA, I
B
=0 -25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-10PA, I
C
=0 -5
V
Collector cut-off current
I
CBO
V
CB
=-20V, I
E
=0 -0.1
PA
Emitter cut-off current
I
EBO
V
EB
=-4V, I
C
=0 -0.1
PA
h
FE(1)
V
CE
=-10V, I
C
=-500mA 85 340
DC current gain
h
FE(2)
V
CE
=-5V, I
C
=-1A 50
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-0.2
-0.4
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=-500mA, I
B
=-50mA
-0.85
-1.2
V
Transition frequency
f
T
V
CE
=-10V, I
C
=-50mA, f=200MHz 200
MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz 20
30 pF
CLASSIFICATION OF h
FE(1)
Rank Q R S
Range
85-170 120-240 170-340
Marking AQ AR AS
01-Jun-2002 Rev. A
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