Elektronische Bauelemente
2SB709A
-0.2A , -45V
PNP Silicon General Purpose Transistor
21-Jan-2011 Rev. B Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
For general amplification
Complementary of the 2SD601A
CLASSIFICATION OF h
FE
Product-Rank
2SB709A-Q
2SB709A-R
2SB709A-S
Range
160~260 210~340 290~460
Marking
BQ1 BR1 BS1
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-23 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
-45 V
Collector to Emitter Voltage V
CEO
-45 V
Emitter to Base Voltage V
EBO
-7 V
Collector Currrent I
C
-100
mA
Collector Power Dissipation P
C
200 mW
Junction & Storage Temperature T
J
, T
STG
150, -55 ~ 150 ℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-45 - - V I
C
= -10μA, I
E
=0
Collector-emitter breakdown voltage
V
(BR)CEO
-45 - - V I
C
= -2mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-7 - - V I
E
= -10μA, I
C
=0
Collector cut-off current I
CBO
- - -0.1 μA V
CB
= -20V, I
E
=0
Emitter cut-off current I
CEO
- - -100 μA V
CE
= -10V, I
B
=0
Collector-emitter saturation voltage V
CE(sat)
- - -0.5 V I
C
= -100mA, I
B
= -10mA
DC current gain h
FE
160 - 460 V
CE
= -10V, I
C
= -2mA
Transition frequency f
T
60 - - MHz V
CE
= -10V, I
C
= -1mA, f=200MHz
Collector output capacitance C
ob
- - 2.7 pF V
CB
= -10V, I
E
=0, f=1MHz
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
REF.
Min. Max.
REF.
Min. Max.
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
SOT-23
