Transition frequency
f
T
V
CE
=-5V,, I
C
=- 150 mA
Collector output capacitance
C
ob
V
CB
=-10V , I
E
=0,f=1MHz
27
pF
Base-emitter voltage
V
BE
* V
CE
=- 5V,I
C
=- 150mA
140
MH
-1.5
V
z
*
The 2SB649 and 2SB649A are grouped by h as follows.
Collector-emitter saturation voltage
V
CE (sat)
*
I
C
=- 500 mA, I
B
=-50mA
-1 V
FE1
B
C
D
2SB649 60 - 120 100 - 200 160 - 320
2SB649A 60 - 120 100 - 200
----
h
FE(1)
*
V
CE
= 5V, I
C
= -150mA
60
DC current gain
h
FE(2)
*
V
CE
=-5V, I
C
= - 500mA
-
2SB649A
30
60
2SB649
320
200
Rank
Collector-emitter breakdown voltage
V
(BR)EBO
I
E
=- 1 A I
c
=0
-5
V
Parameter
Symbol Test conditions MIN MAX UNI
Collector-base breakdown voltage
V
(BR)CBO
Ic=- 1 A I
E
=0
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=- 10mA I
B
=0
V
-180
2SB649
2SB649A
-120
-160
m
Collector cut-off current
I
CBO
V
CB
=-160
V ,
I
E
=0 -10
A
Emitter cut-off current
I
EBO
V
EB
= - 4V , I
C
=0
-10
A
m
-Jun-2002 Rev. A
Page 1 of 2
FEATURES
Power smplifier applications
Power dissipation
P
CM
: 1 W Tamb=25
Collector current
I
CM
: - 1.5 A
Collector-base voltage
V
(BR)CBO
: -180 V
Operating and storage junction temperature ra nge
T
J
T
stg
: -55 to +150
Collector-emitter voltage
V
CEO
2SB649
2SB649A
: -120 V
: -160 V
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
T
01
Elektronische Bauelemente
2SB649/2SB649A
PNP Type
Plastic Encapsulate Transistors
TO-126C
8.0±0.2
1: Emitter
2: Collector
3: Base
4.14±0.1
11.0±0.2
1.4±0.1
15.3±0.2
1.27±0.1
2.28 Typ.
4.55
±0.1
0.5±
0.1
2.0±
0.2
3.2±
0.2
1 2 3
0.76±0.1
Dimensions in Millimeters
O2.8±0.1
O3.2±0.1
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free