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1998©
Document No. D16131EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
FEATURES
• High-DC current gain due to Darlington connection
• Low collector saturation voltage
• Low collector cutoff current
• Ideal for use in direct drive from IC output for magnet drivers such
as treminal equipment or cash registers
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
−100
V
Collector to emitter voltage V
CEO
−100
V
Emitter to base voltage V
EBO
−7.0
V
Collector current I
C(DC)
–
+
5.0
A
Collector current I
C(pulse)
*
–
+
8.0
A
Base current I
B(DC)
−0.5
A
Total power dissipation
P
T
(Ta = 25°C)
1.5 W
Total power dissipation
P
T
(Tc = 25°C)
30 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
(/(&752'(
&211(&7,21
