Elektronische Bauelemente
2SB562
0.9 W, -1 A, -25 V
PNP Plastic Encapsulated Transistor
01-June-2002 Rev. A Page 1 of 3
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RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Low frequency power amplifier
z Complementary pair with 2SD468
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
-25 V
Collector to Emitter Voltage V
CEO
-20 V
Emitter to Base Voltage V
EBO
-5 V
Collector Current - Continuous I
C
-1
A
Total Power Dissipation Pc 0.9 W
Junction, Storage Temperature T
J
, T
STG
+150, -55 ~ +150 ℃
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C
Symbol Min. Typ. Max. Unit Test Conditions
V
(BR)CBO
-25
- - V I
C
=-10 μA, I
E
= 0
V
(BR)CEO
-20
- - V I
C
=-1 mA, I
B
= 0
V
(BR)EBO
-5
- - V I
E
=-10 μA, I
C
= 0
I
CBO
- - -1 μA V
CB
=-20 V, I
E
= 0
I
EBO
- -1 μA V
EB
=-4 V, I
C
= 0
V
CE(sat)
- - -0.5 V I
C
=-0.8A, I
B
=-0.08A
V
BE
- - -1 V V
CE
=-2V, I
C
=-0.5A
h
FE(1)
85 - 240 V
CE
=-2V, I
C
=-0.5A
f
T
- 350 - MHz V
CE
= -2V, I
C
= -0.5 A
Cob - 38 - pF V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF h
FE(1)
Rank B C
Range 85 -170 120 - 240