2SB561
-0.7A , -25V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
14-Feb-2011 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Base
Emitte
Collector
A
CE
K
F
D
B
G
H
J
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Frequency Power Amplifier
CLASSIFICATION OF h
FE
Product-Rank 2SB561-B 2SB561-C
Range 85~170 120~240
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
-25 V
Collector to Emitter Voltage V
CEO
-20 V
Emitter to Base Voltage V
EBO
-5 V
Collector Current - Continuous I
C
-0.7 A
Collector Power Dissipation P
C
0.5 W
Thermal Resistance From Junction to Ambient R
θJA
250 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit Test condition
Collector to Base Breakdown Voltage V
(BR)CBO
-25 - - V I
C
= -0.01mA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
-20 - - V I
C
= -1mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
-5 - - V I
E
= -0.01mA, I
C
=0
Collector Cut-Off Current I
CBO
- - -1 μA V
CB
= -20V, I
E
=0
Emitter Cut-Off Current I
EBO
- - -1 μA V
EB
= -5V, I
C
=0
DC Current Gain h
FE
*
85 - 240 V
CE
= -1V, I
C
= -0.15A
Collector to Emitter Saturation Voltage V
CE(sat)
- - -0.5 V I
C
= -0.5A, I
B
= -0.05A
Base to Emitter Voltage V
BE
- - -1 V V
CE
= -1V, I
C
= -0.15A
Collector Output Capacitance C
cb
- 20 - pF V
CB
= -10V, I
E
=0, f=1MHz
Transition Frequency f
T
- 350 - MHz V
CE
= -1V, I
C
= -0.15A
TO-92
Emitte
Collector
Base
REF.
Millimeter
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 -
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76