R07DS0272EJ0300 Rev.3.00 Page 1 of 4
Mar 28, 2011
Preliminary Datasheet
2SB1691
Silicon PNP Epitaxial Planer
Low Frequency Power Amplifier
Features
Small size package: MPAK (SC–59A)
Large Maximum current: I
C
= –1 A
Low collector to emitter saturation voltage: V
CE(sat)
= –0.3 V max.(at I
C
/I
B
= –0.5 A/–0.05 A)
High power di ssi pat ion: P
C
= 800 mW (when usin g al umina ceramic board (25 x 60 x 0. 7 m m))
Complementary pair with 2SD2 6 55
Outline
1
2
3
1. Emitter
2. Base
3. Collecto
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
Note: Marking is “WL-“.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base Voltage V
CBO
60 V
Collector to emitter voltage V
CEO
50 V
Emitter to base voltage V
EBO
–6 V
Collector current I
C
–1 A
Collector peak current ic(peak) –2 A
Collector power dissipation P
C
800* mW
Junction temperature Tj 150 C
Storage temperature Tstg 55 to +150 C
Note: *When using alumina ceramic board (25 x 60 x 0.7 mm)
R07DS0272EJ0300
(Previous: REJ03G0482-0200)
Rev.3.00
Mar 28, 2011
