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1998©
Document No. D15410EJ2V0DS00 (2nd edition)
Date Published July 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB1669
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SB1669 is a power transistor that can be directly driven from
the output of an IC. This transistor is ideal for OA and FA equipment
such as motor and solenoid drivers.
FEATURES
• High DC current amplifier rate
h
FE
≥ 100 (V
CE
= −5.0 V, I
C
= −0.5 A)
• Z type available for surface mounting supported prodcuts
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
−60 V
Collector to emitter voltage V
CEO
−60 V
Emitter to base voltage V
EBO
−7.0 V
Collector current (DC) I
C(DC)
−3.0 A
Collector current (pulse) I
C(pulse)
PW ≤ 10 ms,
duty cycle ≤ 50%
−6.0 A
Base current (DC) I
B(DC)
−1.0 A
(T
C
= 25°C) 25 WTotal power dissipation P
T
(T
A
= 25°C) 1.5 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
ORDERING INFORMATION
Part No. Package
2SB1669 TO-220AB
2SB1669-S TO-262
2SB1669-Z TO-220SMD
