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2SB1664

2SB1664首页预览图
型号: 2SB1664
PDF文件:
  • 2SB1664 PDF文件
  • 2SB1664 PDF在线浏览
功能描述: PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications
PDF文件大小: 43.19 Kbytes
PDF页数: 共4页
制造商: SANYO[Sanyo Semicon Device]
制造商LOGO: SANYO[Sanyo Semicon Device] LOGO
制造商网址: http://www.ssdc-jp.com/eng/
捡单宝2SB1664
供应商
型号
品牌
封装
批号
库存数量
备注
询价
  • 集好芯城

    16

    0755-8328588218188616606陈妍深圳市福田区深南中路3023号汉国中心55楼11010804

  • 2SB1664 T100Q
  • ROHM/罗姆 
  • SOT-89 
  • 最新批? 
  • 17166 
  • 原厂原装现货匹配 

  • 深圳市华康联电子科技有限公司

    7

    0755-8377118118570339653廖S0755-82541490深圳市 福田区 华强北街道 赛格广场4011A11012671

  • 2SB1664 T100Q
  • ROHM 
  • SOT-89 
  • 21+ 
  • 2686 
  • 原装现货 

PDF页面索引
120%
2SB1664
No.8528-1/4
Applications
Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Features
High DC current gain.
Large current capacity and wide ASO.
Low saturation voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
-- 11 0 V
Collector-to-Emitter Voltage V
CEO
--100 V
Emitter-to-Base Voltage V
EBO
-- 6 V
Collector Current I
C
-- 8 A
Collector Current (Pulse) I
CP
--12 A
Collector Dissipation P
C
Tc=25°C35W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=--80V, I
E
=0A --0.1 mA
Emitter Cutoff Current I
EBO
V
EB
=--5V, I
C
=0A --3.0 mA
DC Current Gain h
FE
V
CE
=--3V, I
C
=--4A 1500 4000
Gain-Bandwidth Product f
T
V
CE
=--5V, I
C
=--4A 20 MHz
Collector-to-Emitter Saturation Voltage V
CE
(sat) I
C
=--4A, I
B
=--8mA --1.0 --1.5 V
Base-to-Emitter Saturation Voltage V
BE
(sat) I
C
=--4A, I
B
=--8mA --2.0 V
Collector-to-Base Breakdown Voltage V
(BR)CBO
I
C
=--5mA, I
E
=0A --110 V
Collector-to-Emitter Breakdown Voltage V
(BR)CEO
I
C
=--50mA, R
BE
= --100 V
Turn-ON Time t
on
See specified Test Circuit. 0.7 µs
Storage T ime t
stg
See specified Test Circuit. 1.4 µs
Fall T ime t
f
See specified Test Circuit. 1.5 µs
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8528
73106IA MS IM TA-1083
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
2SB1664
PNP Epitaxial Planar Silicon Darlington Transistor
Driver Applications
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