PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cutoff Currnet ICB0 VCB = −30 V, IE = 0 −100 nA
Emitter Cutoff Current IEB0 VEB = −6.0 V, IC = 0 −100 nA
DC Current Gain hFE1 VCE = −2.0 V, IC = −1.0 A 150 600
−
DC Current Gain hFE2 VCE = −2.0 V, IC = −4.0 A 50
−
Collector Saturation Voltage VCE(sat)1 IC = −1.0 A, IB = −50 mA −0.09 −0.15 V
Collector Saturation Voltage VCE(sat)2 IC = −2.0 A, IB = −0.1 A −0.17 −0.25 V
Collector Saturation Voltage VCE(sat)3 IC = −4.0 A, IB = −0.2 A −0.32 −0.50 V
Base Saturation Voltage VBE(sat) IC = −1.0 A, IB = −0.1 A −0.87 −1.50 V
Gain Bandwidth Product fT VCE = −10 V, IE = −50 mA 95 MHz
Output Capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 100 pF
©
1996
DATA SHEET
The information in this document is subject to change without notice.
SILICON TRANSISTOR
2SB1658
FEATURES
• Low VCE(sat)
VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA)
• High DC Current Gain
hEF = 150 to 600 (@VCE = −2.0 V, lC = −1.0 A)
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current (TA = 25 °C)
Collector to Base Voltage V
CB0 −30 V
Collector to Emitter Voltage V
CE0 −30 V
Emitter to Base Voltage V
EB0 −6.0 V
Collector Current (DC) I
C(DC) −5.0 A
Collector Current (Pulse)* I
C(Pulse) −10 A
Base Current (DC) I
B(DC) −2.0 A
* PW ≤ 10ms, Duty Cycle ≤ 10 %
Maximum Power Dissipation
Total Power Dissipation (T
C = 25 °C) PT 10 W
Total Power Dissipation (T
A = 25 °C) PT 1.0 W
Maximum Temperature
Junction Temperature Tj 150 °C
Storage Temperature T
stg −55 to 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Document No. D10630EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS
in millimeters (inches)
8.5 MAX.
(0.334 MAX.)
1.2
(0.047)
1.2
(0.047)
0.8
(0.031)
2.3
(0.090)
1.
2.
3.
Emitter
Collector connected to mounting plane
Base
2.3
(0.090)
+0.08
−0.05
0.55
(0.021)
+0.08
−0.05
123
12.0 MAX.
(0.472 MAX.)
3.8 ± 0.2 (0.149)
φ
φ
φ
φ
3.2 ± 0.2
( 0.126)
2.5 ± 0.2
(0.098)
13.0 MIN.
(0.512 MIN.)
2.8 MAX.
(0.110 MAX.)
3.2 ± 0.2 ( 0.126)
AUDIO FREQUENCY AMPLIFIER, SWITCHING
PNP SILICON EPITAXIAL TRANSISTORS
