Elektronische Bauelemente
2SB1658
PNP General Purpose Transistor
30-Sep-2015 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
High Current
Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector - Base Voltage V
CBO
-30 V
Collector - Emitter Voltage V
CEO
-30 V
Emitter - Base Voltage V
EBO
-6 V
Collector Current -Continuous I
C
-5
A
Collector Power Dissipation P
C
1 W
Maximum Junction to Ambient R
θJA
125 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55 ~ 150 °C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max.
Unit Test Conditions
Collector-Base Breakdown Voltage V
(BR)CBO
-30 - - V I
C
= -0.1mA, I
E
=0
Collector-Emitter Breakdown voltage V
(BR)CEO
-30 - - V I
C
= -1mA, I
B
=0
Emitter-Base Breakdown Voltage V
(BR)EBO
-6 - - V I
C
=0, I
E
= -0.1mA
Collector Cut-Off Current I
CBO
- - -0.1 µA V
CB
= -30V, I
E
= 0
Emitter Cut-Off Current I
EBO
- - -0.1 µA V
EB
= -6V, I
C
= 0
h
FE(1)
150 - 600 V
CE
= -2V, I
C
= -1A
DC Current Gain
h
FE(2)
50 - -
V
CE
= -2V, I
C
= -4A
V
CE(sat)1
- - -0.15 I
C
= -1A, I
B
= -50mA
V
CE(sat)2
- - -0.25 I
C
= -2A, I
B
= -100mA
Collector-Emitter Saturation Voltage
V
CE(sat)3
- - -0.5
V
I
C
= -4A, I
B
= -200mA
Base-Emitter Saturation Voltage V
BE(sat)
- - -1.5 V I
C
= -1A, I
B
= -100mA
Transition frequency f
T
- 95 - MHz V
CE
= -10V, I
C
= -50mA
Collector output capacitance C
ob
- 100 - pF V
CB
= -10V, I
E
= 0, f=1MHz
TO-126
REF.
REF.
2
22
2Collector
3
33
3Base
