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1998©
Document No. D16129EJ2V0DS00 (2nd edition)
Date Published July 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SB1453
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SB1453 is a power transistor that can directly drive from
the IC output. This transistor is ideal for motor drivers and solenoid
drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High DC current amplifier ratio
h
FE
≥ 100 (V
CE
= −5 V, I
C
= −0.5 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
−60 V
Collector to emitter voltage V
CEO
−60 V
Emitter to base voltage V
EBO
−7.0 V
Collector current (DC) I
C(DC)
−3.0 A
Collector current (pulse) I
C(pulse)
* −6.0 A
Base current (DC) I
B(DC)
−1.0 A
Total power dissipation P
T
(Tc = 25°C) 25 W
Total power dissipation P
T
(Ta = 25°C) 2.0 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
