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1998©
Document No. D14859EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB1432
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SB1432 is a Darlington power transistor that can be directly
driven from the output of an IC. This transistor is ideal for OA and FA
equipment such as motor and solenoid drivers.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
• High h
FE
due to Darlington connection
h
FE
≥ 1,000 @V
CE
= −2.0 V, I
C
= −10 A)
• Mold package that does not require an insulation board or insulation
bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
CBO
−100
V
Collector to emitter voltage V
CEO
−100
V
Emitter to base voltage V
EBO
−8.0
V
Collector current (DC) I
C(DC)
–
+
10
A
Collector current (pulse) I
C(pulse)
PW ≤ 300
µ
s,
duty cycle ≤ 10%
–
+
20
A
Base current (DC) I
B(DC)
−1.0
A
T
C
= 25°C
30 W
Total power dissipation P
T
T
A
= 25°C
2.0 W
Junction temperature T
j
150
°C
Storage temperature T
stg
−55 to +150 °C
ORDERING INFORMATION
Part No. Package
2SB1432 Isolated TO-220
(Isolated TO-220)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
