2SB1426
-3A , -20V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
14-Feb-2011 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Base
Emitte
Collector
A
CE
K
F
D
B
G
H
J
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification
CLASSIFICATION OF h
FE
Product-Rank 2SB1426-P 2SB1426-Q 2SB1426-R
Range 82~180 120~270 180~390
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
-20 V
Collector to Emitter Voltage V
CEO
-20 V
Emitter to Base Voltage V
EBO
-6 V
Collector Current - Continuous I
C
-3 A
Collector Power Dissipation P
C
0.75 W
Thermal Resistance From Junction to Ambient R
θJA
166 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit Test condition
Collector to Base Breakdown Voltage V
(BR)CBO
-20 - - V I
C
= -0.05mA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
-20 - - V I
C
= -1mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
-6 - - V I
E
= -0.05mA, I
C
=0
Collector Cut-Off Current I
CBO
- - -0.1 μA V
CB
= -20V, I
E
=0
Emitter Cut-Off Current I
EBO
- - -0.1 μA V
EB
= -5V, I
C
=0
DC Current Gain h
FE
82 - 390 V
CE
= -2V, I
C
= -0.1A
Collector to Emitter Saturation Voltage V
CE(sat)
*
- - -0.5 V I
C
= -2A, I
B
= -0.1A
Collector-Base Capacitance C
cb
- 35 - pF V
CB
= -10V, I
E
=0, f=1MHz
Transition Frequency f
T
- 240 - MHz V
CE
= -2V, I
C
= -0.5A, f=100MHz
*Pulse test
TO-92
Emitte
Base
Collector
REF.
Millimeter
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 -
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76
