Any changing of specification will not be informed individual
2SB1412
PNP Silicon
Low Frequency Transistor
RoHS Compliant Product
http://www.SeCoSGmbH.com
Elektronische Bauelemente
0.2
0.2
0.1
6.6
5.3
0.2
5.6
0.2
7.0
0.3
2.5
0.2
1.0
0.1
0.8
0.7
2.3
0.1
0.6
1.5Max
0.3
1.2
0.1
0.5
0.1
2.3
0.2
0.1
0.3
0.1
0.1
!
!!
!Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm
2
or larger.
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
−30 V
V
V
A(DC)
°C
°C
−20
−6
−5
I
C
A(Pulse)
−10
∗1
∗3
∗2
0.5
2W
W
W
1
10
W(T
C=
25
°C)
1W
2SB1386
2SB1412
2SB1326
150
−55
~
+150
Symbol Limits Unit
!
!!
!Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-emitter saturation voltage
Output capacitance
∗
Measured using pulse current.
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
−30
−20
−6
−
−
822SB1386,2SB1412
2SB1326
−
∗
∗
∗
−
−
−
−
−
−
−
−
−
120
60
−
−
−
−0.5
−0.5
390
−1.0
−
−
V I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−20V
V
EB
=−5V
V
CE
=−2V, I
C
=−0.5A
I
C
/I
B
=−4A/−0.1A
V
CE
=−6V, I
E
=50mA, f=30MHz
V
CB
=−20V, I
E
=0A, f=1MHz
V
V
µA
µA
−
120
−
390
−
V
MHz
pF
Typ. Max. Unit Conditions
Transition frequency
!
!!
!Packaging specifications and h
FE
Package
Code
Taping
Basic ordering
unit (pieces)
T100 TL
1000 2500
−PQR
h
FE
2SB1386
−
TV2
2500
−
−PQR2SB1412
−−
QR2SB1326
Type
2)Excellent DC current gain characteristics
3)Complements the 2SD2118
01-Jun-2002 Rev. A
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