Elektronische Bauelemente
2SB1386
-5A, -30V
PNP Silicon Low Frequency Transistor
10-Dec-2010 Rev. B Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low V
CE
(sat)
Excellent DC current gain characteristics
Complements the 2SD2098
CLASSIFICATION OF h
FE
Product-Rank
2SB1386-P
2SB1386-Q
2SB1386-R
Range
82~180 120~270 180~390
Marking
BHP BHQ BHR
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-89 1K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Ratings
Unit
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-6 V
-5 A(DC)
Collector Current -Continuous
I
C
-10 A(Pulse)
(1)
0.5
Collector Power Dissipation
P
D
2
W
(2)
Junction & Storage Temperature
T
J
, T
STG
150, -55~150 °C
Note:
(1) Single pulse, Pw=10ms.
(2) When mounted on a 40⋅40⋅0.7 mm ceramic board.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max. Unit
Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-30
- - V IC=-50µA
Collector-emitter breakdown voltage V
(BR)CEO
-20 - - V I
C
= -1mA
Emitter-base breakdown voltage V
(BR)EBO
-6 - - V I
E
= -50µA
Collector cut-off current I
CBO
-
- -0.5 μA V
CB
= -20V
Emitter cut-off current I
EBO
- - -0.5 μA V
EB
= -5V
Collector-emitter saturation voltage
V
CE(sat)
-
- -1.0 V I
C
/I
B
= -4A/-0.1A *
DC current gain * h
FE
82 - 390 V
CE
= -2V, I
C
= -0.5A
*
Transition frequency f
T
- 120 - MHz V
CE
= -6V, I
E
= -50mA, f=30MHz
Output Capacitance C
OB
- 60 - pF V
CB
= -20V, I
E
=0, f=1MHz
∗Measured using pulse current.
SOT-89
REF.
REF.
D 2.30 2.60 K 0.32 0.52
E 1.50 1.70 L 0.35 0.44
F 0.89
1.2
