Any changing of specification will not be informed individual
2SB1386
PNP Silicon
Low Frequency Transistor
RoHS Compliant Product
http://www.SeCoSGmbH.com
Elektronische Bauelemente
Features
z
zz
z$EVROXWHPD[LPXPUDWLQJV7D °&
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
−30 V
V
V
A(DC)
°C
°C
−20
−6
−5
I
C
A(Pulse)−10
∗1
∗2
0.5
2W
W
150
−55
~
+150
Symbol Limits Unit
z
zz
z(OHFWULFDOFKDUDFWHULVWLFV7D °&
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-emitter saturation voltage
Output capacitance
∗
Measured using pulse current.
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
−30
−20
−6
−
−
82
−
∗
∗
−
−
−
−
−
−
−
−
−
120
60
−
−
−
−0.5
−0.5
390
−1.0
−
−
V I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−20V
V
EB
=−5V
V
CE
=−2V, I
C
=−0.5A
I
C
/I
B
=−4A/−0.1A
V
CE
=−6V, I
E
=50mA, f=30MHz
V
CB
=−20V, I
E
=0A, f=1MHz
V
V
µA
µA
−
V
MHz
pF
Typ. Max. Unit Conditions
Transition frequency
z
zz
1)Low VCE(sat).
2)Excellent DC current gain characteristics
3)Complements the 2SD2098
K
)(
YDOXHVDUHFODVVLILHGDVIROORZV
Rank P Q R
h
FE
82
~
180 120
~
270 180
~
390
SOT-89
1.BASE
2.COLLECTOR
3.EMITTER
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
0.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
1.100
Min
0.055
0.013
0.014
0.014
0.173
0.055
0.091
0.155
0.114
0.035
Max
0.063
0.020
0.022
0.017
0.181
0.071
0.102
0.167
0.122
0.043
Dimensions In Millimeters Dimensions In Inches
0.060TYP
1.500TYP
D
D1
C
A
b
b1
E1
E
L
e
e1
01-Jun-2002 Rev. A
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