Elektronische Bauelemente
2SB1274
-3A , -60V
PNP Plastic Encapsulated Transistor
25-Jun-2013 Rev. B Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specifica tion will not be informed individually.
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification.
Wide ASO (Adoption of MBIT Process)
Low Saturation Voltage.
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
-60 V
Collector to Emitter Voltage V
CEO
-60 V
Emitter to Base Voltage V
EBO
-6 V
Collector Current - Continuous I
C
-3 A
Collector Power Dissipation P
C
2 W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit Test condition
Collector to Base Breakdown Voltage V
(BR)CBO
-60 - - V I
C
= -1mA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
-60 - - V I
C
= -5mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
-6 - - V I
E
= -1mA, I
C
=0
Collector Cut-Off Current I
CBO
- - -0.1 μA V
CB
= -40V, I
E
=0
Emitter Cut-Off Current I
EBO
- - -0.1 μA V
EB
= -4V, I
C
=0
100 - 200 V
CE
= -5V, I
C
= -500mA
DC Current Gain h
FE
20 - - V
CE
= -5V, I
C
= -3A
Collector to Emitter Saturation Voltage V
CE(sat)
- - -1 V I
C
= -2A, I
B
= -200mA
Base to Emitter Saturation Voltage V
BE(sat)
- - -1 V V
CE
= -5V, I
C
= -500mA
Transition Frequency f
T
- 100 - MHz V
CE
= -5V, I
C
= -500mA
Collector output capacitance C
ob
- 60 - pF V
CB
= -10V, I
E
=0, f=1MHz
TO-220J
