Elektronische Bauelemente
2SB1260
-1 A, -80 V
PNP Plastic Encapsulated Transistor
01-July-2007 Rev. A Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
1
Base
3
Emitte
Collector
24
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High breakdown voltage and high current BV
CEO
=-80V, I
C
=-1A
Good h
FE
linearity
Complements to 2SD1898
PACKAGE INFORMATION
Weight: 0.05 g (approximately)
MARKING
ZL
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings
Unit
Collector-Base Voltage V
CBO
-80 V
Collector-Emitter Voltage V
CEO
-80 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current -Continuous I
C
-1 A
Collector Power Dissipation P
C
0.5 W
Junction & Storage Temperature T
J
, T
STG
150, -55~150 °C
PNP ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-80 - - V I
C
=-50μA, I
E
=0
Collector-emitter breakdown voltage V
(BR)CEO
-80 - - V I
C
= -1mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-5 - - V I
E
=-50μA, I
C
=0
Collector cut-off current I
CBO
-
- -1 μA V
CB
=-60V, I
E
=0
Emitter cut-off current I
EBO
- - -1 μA V
EB
=-4 V, I
C
=0
DC current gain h
FE
82 - 390 V
CE
=-3V, I
C
= -100mA
Collector-emitter saturation voltage V
CE(sat)
- - -0.4 V I
C
=-500mA, I
B
= -50mA
Transition frequency f
T
- 100 - MHz V
CE
=-5V, I
C
=-50mA, f=30MHz
Output Capacitance C
OB
- 25 - pF V
CB
=-10V, I
E
=0, f=1MHz
CLASSIFICATION OF hFE2
Rank Q R
S
Range 82 - 180 120 - 270 180 - 390
Millimete
Millimete
REF.
Min. Max.
REF.
Min. Max.
A 4.40 4.60 G 0.40 0.58
B 3.94 4.25 H 1.50 TYP
C 1.40 1.60 J 3.00 TYP
D 2.30 2.60 K 0.32 0.52
E 1.50 1.70 L 0.35 0.44
F 0.89 1.20
SOT-89
A
E
C
DB
KH
F G
L
J
1
2
3
4
B
C
E
