2SB1218A
-0.1A , -60V
PNP Silicon Epitaxial Paner Transistors
Elektronische Bauelemente
14-Feb-2011 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
APPLICATIONS
General Purpose Amplification
FEATURES
High DC Current Gain
Complementary to 2SD1819A
CLASSIFICATION OF h
FE
Product-Rank
2SB1218A-Q 2SB1218A-R 2SB1218A-S
Range
160~260 210~340 290~460
Marking
BQ1 BR1 BS1
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-323 3K 7’ inch
MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector-Base Voltage V
CBO
-45 V
Collector-Emitter Voltage V
CEO
-45 V
Emitter-Base Voltage V
EBO
-7 V
Collector Current I
C
-100 mA
Collector Power Dissipation P
C
150 mW
Thermal Resistance From Junction to Ambient R
θJA
833 °C / W
Junction & Storage temperature T
J
, T
STG
150, -55 ~ 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-Base Breakdown Voltage V
(BR)CBO
-45 - - V I
C
= -10μA, I
E
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-45 - - V I
C
= -2mA, I
B
=0
Emitter-Base Breakdown Voltage V
(BR)EBO
-7 - - V I
E
= -10μA, I
C
=0
Collector Cut-Off Current I
CBO
- - -100 nA V
CB
= -20V, I
E
=0
Collector Cut-Off Current I
CEO
- - -100 μA V
EB
= -10V, I
B
=0
Emitter Cut-off Current I
EBO
- - -100 nA V
EB
= -5V, I
C
=0
DC Current Gain h
FE
160 - 460 V
CE
= -10V, I
C
= -2mA
Collector-Emitter Saturation Voltage V
CE(sat)
- - -0.5 V I
C
= -100mA, I
B
= -10mA
Transition Frequency f
T
- 80 - MHz V
CE
= -10V, I
E
=1mA, f=200MHz
Collector Output Capacitance C
ob
- 2.7 - pF V
CB
= -10V, I
E
=0, f=1MHz
SOT-323
REF.
Millimeter
REF.
Millimeter
Min. Max. Min. Max.
A 1.80 2.20 G 0.100 REF.
B 1.80 2.45 H 0.525 REF.
C 1.15 1.35 J 0.08 0.25
D 0.80 1.10 K - -
E 1.20 1.40 L 0.650 TYP.
F 0.20 0.40
