Any changing of specification will not be informed individual
2SB1198K
PNP Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS
Tamb=25 unless otherwise specified
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
-50
A,I
E
=0
-80
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
-2
mA,I
B
=0
-80
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
-50
A,I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=
-50
V,I
E
=0
-0.5
A
Emitter cut-off current
I
EBO
V
EB
=
-4
V,I
C
=0
-0.5
A
DC current gain
h
FE(1)
V
CE
=
-3
V,I
C
=
-100
mA
120
390
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
-500
mA,I
B
=
-50
mA
-0.5
V
Transition frequency
f
T
V
CE
=
-10
V,I
C
=
-50
mA
180
MHz
Collector output cap acitance
C
ob
V
CB
=
-10
V,I
E
=0,f=
1
MHz
11
pF
CLASSIFICATION OF h
FE(1)
Rank
Q R
Range
120-270 180-390
FEATURES
Power dissipation
P
CM
: 0.2 W
Collector current
I
CM
: -0.5 A
Collector-base voltage
V
(BR)CBO
: -80 V
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150
Dim Min Max
A 2.70 3.10
B 1.30 1.70
C 1.00 1.30
D 0.35 0.50
G 1.70 2.30
H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 1.25 1.65
S 2.25 3.00
All Dimension in mm
SC-59
S
G
D
B
L
A
1
3
2
Top View
H
C
J
K
2
1
3
01-Jun-2002 Rev. A
Page 1 of 2
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
