Elektronische Bauelemente
2SB1197K
-0.8 A, -40 V
PNP Epitaxial Planar Transistor
31-Dec-2010 Rev. C Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low V
CE(sat)
.V
CE(sat
)
≦-0.5V(I
C
/ I
B
= -0.5A /-50mA)
I
C
=-0.8A
MECHANICAL DATA
Case: SC-59,
Weight: 0.008 grams(approx.)
CLASSIFICATION OF h
FE
Product-Rank
2SB1197K-Q 2SB1197K-R
Range
120~270 180~390
Marking
AHQ AHR
PACKAGE INFORMATION
Package MPQ LeaderSize
SC-59 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
-40 V
Collector to Emitter Voltage V
CEO
-32 V
Emitter to Base Voltage V
EBO
-5 V
Collector Currrent I
C
-800
mA
Total Power Dissipation Pc 200 mW
Junction & Storage Temperature T
J
, T
STG
+150, -55 ~ +150 ℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage BV
CBO
-40 - - V I
C
=-50μA
Collector-emitter breakdown voltage
BV
CEO
-32 - - V I
C
=-1mA
Emitter-base breakdown voltage BV
EBO
-5 - - V I
E
=-50μA
Collector cut-off current I
CBO
- - -0.5 μA V
CB
=-20V
Emitter cut-off current I
EBO
- - -0.5 μA V
EB
= -4V
Collector-emitter saturation voltage V
CE(sat)
- - -0.5 V I
C
=-500mA, I
B
=-50mA
DC current gain h
FE
120 - 390 V
CE
=-3V, I
C
=-100mA
Transition frequency f
T
50 200 - MHz V
CE
=-5V, I
C
=-50mA, f=100MHz
Collector output capacitance C
OB
- 12 30 pF V
CB
=-10V, I
E
=0, f=1MHz
SC-59
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
Millimeter Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A 2.70
3.10 G 0.10 REF.
B 2.25
3.00 H 0.40 REF.
C 1.30
1.70 J 0.10
0.20
D 1.00
1.40 K 0.45
0.55
E 1.70
2.30 L 0.85
1.15
F 0.35
0.50
