Elektronische Bauelemente
2SB1188
-2A, -40V
PNP Silicon Medium Power Transistor
10-Dec-2010 Rev. D Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The 2SB1188 is designed for medium poweramplifier applications.
FEATURES
Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
RoHS Compliant Product
CLASSIFICATION OF h
FE
Product-Rank
2SB1188-P
2SB1188-Q
2SB1188-R
Range
82~180 120~270 180~390
Marking
BCP BCQ BCR
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-89 1K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Ratings
Unit
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-32 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current -Continuous
I
C
-2 A
Collector Power Dissipation
P
D
0.5 (2.0*)
W
Junction & Storage Temperature
T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max. Unit
Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-40
- - V IC=-50µA , IE=0
Collector-emitter breakdown voltage V
(BR)CEO
-32 - - V I
C
= -1mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-5 - - V I
E
= -50µA, I
C
=0
Collector cut-off current I
CBO
-
- -1 μA V
CB
= -20V, I
E
=0
Emitter cut-off current I
EBO
- - -1 μA V
EB
= -4V, I
C
=0
Collector-emitter saturation voltage
V
CE(sat)
-
-500 -800 mV I
C
=--2A, I
B
= -200mA
DC current gain h
FE
82 - 390- V
CE
= -3V, I
C
= -500mA
Transition frequency f
T
- 150 - MHz V
CE
= -5V, I
C
= -500mA, f=30MHz
Output Capacitance C
OB
- 50 - pF V
CB
= -10V, I
E
=0, f=1MHz
Pulse Test: Pulse Width ≦ 380µs, Duty Cycle≦2%
SOT-89
REF.
REF.
D 2.30 2.60 K 0.32 0.52
E 1.50 1.70 L 0.35 0.44
F 0.89
1.2