2SB1184
-3A , -60V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
22-Oct-2012 Rev. B Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Designed for general
Low VCE(sat)
CLASSIFICATION OF h
FE
Product-Rank
2SB1184-P 2SB1184-Q 2SB1184-R
Range 82~180 120~270 180~390
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
CBO
-60 V
Collector to Emitter Voltage V
CEO
-50 V
Emitter to Base Voltage V
EBO
-5 V
Collector Current -Continuous I
C
-3
A
Collector Power Dissipation P
C
1 W
Junction and Storage Temperature Range T
J
,T
STG
150 , -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Parameter Symbol Min. Typ. Max.
Unit Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-60 - - V I
C
= -50µA, I
E
=0
Collector-emitter breakdown voltage V
(BR)CEO
-50 - - V I
C
= -1mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-5 - - V I
E
= -50µA, I
C
=0
Collector cut-off current I
CEO
- - -1 µA V
CB
= -40V, I
E
=0
Emitter cut-off current I
EBO
- - -1 µA V
EB
= -4V, I
C
=0
DC current gain h
FE
82 - 390 V
CE
= -3V, I
C
= -0.5A
Collector-emitter saturation voltage V
CE(sat)
- - -1 V I
C
= -2A, I
B
= -200mA
Base-emitter saturation voltage V
BE(sat)
- - -1.2 V I
C
= -1.5A, I
B
= -150mA
Transition frequency f
T
- 70 - MHz
V
CE
= -5V, I
C
= -500mA,
f
T
=30MHz
Collector output capacitance C
ob
- 50 - pF V
CB
= -10V, f=1MHz, I
E
=0
Package MPQ Leader Size
TO-252 2.5K 13 inch
D-Pack (TO-252)
REF.
REF.