Any changing of specification will not be informed individual
2SB1182D
PNP Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com
Elektronische Bauelemente
FEATURES
The 2SB1182DX is designed for medium power amplifier application
Low collector saturation voltage: VCE(sat)=-0.5V (Typ.)
MARKING : 1182
(With Date Code)
MAXIMUM RATINGS* TA=25
O
C unless otherwise noted
Parameter Symbol Value Units
Collector-Base Voltage VCBO -40
V
Collector-Emitter Voltage VCEO -32 V
Emitter-Base Voltage VEBO -5
V
Collector Current -Continuous IC -2
A
Collector Dissipation PC 10 W
Junction and Storage Temperature
TJ, Tstg
+150
,-55~+150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-50µA, IE=0 -40
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= -1mA,I
B
=0 -32 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= -50µA, I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-20V,I
E
=0 -1 uA
Emitter cut-off current
I
EBO
V
EB
=-4V,I
C
=0 -1 uA
DC current gain
h
FE
V
CE
=-3V,I
C
=-500mA
82
390
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-500mA,I
B
=-200mA -500 -800 V
Transition frequency
f
T
V
CE
=-5V,Ic=500mA,f=100MHz 100 MHz
Collector output capacitance
C
ob
V
CB
=-10V,f=1MHz 50 pF
CLASSIFICATION OF h
FE
Rank P Q R
Range
82 - 180 120 - 270 180
- 390
01-Jun-2002 Rev. A
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Collector Current -Pulse,Pw=100mS IC -2
A
RoHS Compliant Product
C
TO-252