Elektronische Bauelemente
2SB1132
-1A, -40V
PNP Silicon Medium Power Transistor
10-Dec-2010 Rev. B Page 1 of 3
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low power dissipation 0.5W
MARKING
CLASSIFICATION OF h
FE
Product Rank
2SB1132-P
2SB1132-Q
2SB1132-R
Range 82~180 120~270 180~390
PACKAGE INFORMATION
Package MPQ LeaderSize
SOT-89 1K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Ratings
Unit
Collector-Base Voltage V
CBO
-40
V
Collector-Emitter Voltage V
CEO
-32 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current (DC) I
C
-1 A
Collector Power Dissipation P
C
500 mW
Junction & Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max. Unit
Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-40
- - V I
C
= -50µA, I
E
=0
Collector-emitter breakdown voltage V
(BR)CEO
-32 - - V I
C
= -1mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-5 - - V I
E
= -50µA, I
C
=0
Collector cut-off current I
CBO
-
- -0.5 µA V
CB
= -20V, I
E
=0
Emitter cut-off current I
EBO
- - -0.5 µA V
EB
= -4V, I
C
=0
DC current gain h
FE
82 - 390 V
CE
= -3V, I
C
= -100mA
Collector-emitter saturation voltage V
CE(sat)
- -0.2 -0.5 V I
C
= -500mA, I
B
= -50mA
Transition frequency f
T
- 150 - MHz V
CE
= -5V, I
C
= -50mA, f=30MHz
Collector output capacitance C
ob
- 20 30 pF V
CB
= -10V, I
E
=0, f=1MHz
SOT-89
Date Code
REF.
Min.
Max.
REF.
Min.
Max.
D 2.30 2.60 K 0.32 0.52
E 1.50 1.70 L 0.35 0.44
F 0.89
1.2
