Elektronische Bauelemente
2SB1116A
-1 A, -80 V
PNP Plastic Encapsulated Transistor
21-Jan-2011 Rev. B Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Collector Power Dissipation
Complementary to 2SD1616A
CLASSIFICATION OF h
FE(1)
Product-Rank
2SB1116A-L
2SB1116A-K
2SB1116A-U
Range 135~270 200~400 300~600
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
-80 V
Collector to Emitter Voltage V
CEO
-60 V
Emitter to Base Voltage V
EBO
-6 V
Collector Current - Continuous I
C
-1 A
Collector Power Dissipation P
C
0.75 W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage V
(BR)CBO
-80 - - V I
C
= -100µA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
-60 - - V I
C
= -1mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
-6 - - V I
E
= -100µA, I
C
=0
Collector Cut-Off Current I
CBO
- - -0.1 µA V
CB
= -80V, I
E
=0
Emitter Cut-Off Current I
EBO
- - -0.1 µA V
EB
= -6V, I
C
=0
h
FE (1)
135 - 600 V
CE
= -2V, I
C
= -0.1A
DC Current Gain
h
FE (2)
81 - -
V
CE
= -2V, I
C
= -1A
Collector to Emitter Saturation Voltage V
CE(sat)
- - -0.3 V I
C
= -1A, I
B
= -50mA
Base to Emitter Saturation Voltage V
BE(sat)
- - -1.2 V I
C
= -1A, I
B
= -50mA
Base to Emitter voltage V
BE
-0.6 - -0.7 V V
CE
= -2V, I
C
= -0.05A
Collector-Base Capacitance C
cb
- 25 - pF V
CB
= -10V, I
E
=0, f=1MHz
Transition Frequency f
T
70 - - MHz V
CE
= -2V, I
C
= -0.1A
Turn-on time T
ON
- 0.07 -
Storage time T
S
- 0.7 -
Fall time T
F
- 0.07 -
us
V
CC
= -10V, I
C
= -0.1A, I
B1
= -I
B2
= -0.01A
V
BE(off)
= 2 ~ 3V
TO-92
2
22
2Collector
3
33
3Base
REF.
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70
-
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76