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2SB1116-L

2SB1116-L首页预览图
型号: 2SB1116-L
PDF文件:
  • 2SB1116-L PDF文件
  • 2SB1116-L PDF在线浏览
功能描述: PNP Plastic Encapsulated Transistor
PDF文件大小: 75.35 Kbytes
PDF页数: 共1页
制造商: SECOS[SeCoS Halbleitertechnologie GmbH]
制造商LOGO: SECOS[SeCoS Halbleitertechnologie GmbH] LOGO
制造商网址: http://www.secosgmbh.com
捡单宝2SB1116-L
供应商
型号
品牌
封装
批号
库存数量
备注
询价
  • 深圳市惊羽科技有限公司

    4

    实-单-专-线----135-7521-2775135-7521-2775-------Q-微-恭-候-----有-问-秒-回彭小姐深圳市福田区深南中路3037号南光捷佳大厦2031室11016819

  • 2SB1116-L
  • MCC-美微科 
  • SOT-23.贴片 
  • ▉▉:2年内 
  • ▉▉:18800 
  • ▉▉¥10一有问必回一特殊渠道一有长期订货一备货HK仓库 

PDF页面索引
120%
2SB1116
-1A , -60V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
27-Aug-2012 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Top View
A
L
C B
D
G
H J
F
K E
1
2
3
1
2
3
1
Base
2
Emitter
Collector
3
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High current surface mount PNP silicon switching transistor
for Load management in portable applications
CLASSIFICATION OF h
FE
Product-Rank
2SB1116-L 2SB1116-K
2AB1116-U
Range
135~270 200~400 300~600
MARKING
PACKAGE INFORMATION
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector - Base Voltage V
CBO
-60 V
Collector - Emitter Voltage V
CEO
-50 V
Emitter - Base Voltage V
EBO
-6 V
Collector Current - Continuous I
C
-1 A
Collector Power Dissipation
P
C
350 mW
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Collector-Base Breakdown Voltage V
(BR)CBO
-60 - - V I
C
= -100µA, I
E
=0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-50 - - V I
C
= -1mA, I
B
=0
Emitter-Base Breakdown Voltage V
(BR)EBO
-6 - - V I
E
= -100µA, I
C
=0
Collector Cut-Off Current I
CBO
- - -0.1 µA V
CB
= -60V, I
E
=0
Emitter Cut-Off Current I
EBO
- - -0.1 µA V
EB
= -6V, I
C
=0
DC Current Gain h
FE
135 - 600
V
CE
= -2V, I
C
= -100mA
81 - - V
CE
= -2V, I
C
= -1A
Collector-Emitter Saturation Voltage V
CE(sat)
- - -0.3 V I
C
= -1A, I
B
= -50mA
Base-Emitter Saturation Voltage V
BE(sat)
- - -1.2 V I
C
= -1A, I
B
= -50mA
Base -emitter voltage V
BE
-0.6 - -0.7 V V
CE
= -2V, I
C
= -50mA
Transition frequency f
T
70 - - MHz
V
CE
= -2V,I
C
= -100mA
Collector Output Capacitance C
ob
- 25 - pF V
CB
= -10V, I
E
=0, f=1MHz
Turn-on time t
ON
- 0.07 -
µS
V
CC
= -10V,I
C
= -100mA,
I
B1
=-I
B2
= -0.01A, V
BE(off)
=2~3V
Storage time t
S
- 0.7 -
Fall time t
f
- 0.07 -
1116
Package MPQ Leader Size
SOT-23 3K 7 inch
SOT
-
23
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A 2.70
3.04
G - 0.18
B 2.10
2.80
H 0.40
0.60
C 1.20
1.60
J 0.08
0.20
D 0.89
1.40
K 0.6 REF.
E 1.78
2.04
L 0.85
1.15
F 0.30
0.50
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