Elektronische Bauelemente
2SA94
-0.2A , -400V
PNP Silicon Medium Power Transistor
15-Dec-2014 Rev. A Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Collector
2
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage Driver Applications
MARKING
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-223 2.5K 13’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Ratings
Unit
Collector-Base Voltage V
CBO
-400 V
Collector-Emitter Voltage V
CEO
-400 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current -Continuous I
C
-0.2 A
Collector Current- Pulsed I
CM
-0.3 A
Collector Power Dissipation P
D
1 W
Thermal Resistance from Junction to Ambient R
θJA
125 °C/W
Junction, Storage Temperature T
J,
T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Collector-base breakdown voltage
V
(BR)CBO
-400 - V I
C
= -0.1mA , I
E
=0
Collector-emitter breakdown voltage
V
(BR)CEO
-400 - V I
C
= -1mA, I
B
=0
Emitter-base breakdown voltage
V
(BR)EBO
-5 - V I
E
= -0.1mA, I
C
=0
Collector cut-off current
I
CBO
- -100 nA V
CB
= -400V, I
E
=0
Collector cut-off current
I
CEO
- -5 µA V
CE
= -400V, I
B
=0
Emitter cut-off current
I
EBO
- -100 nA V
EB
= -4V, I
C
=0
80 300 V
CE
= -10V, I
C
= -10mA
70 - V
CE
= -10V, I
C
= -1mA
60 - V
CE
= -10V, I
C
= -100mA
DC current gain
1
h
FE
80 -
V
CE
= -10V, I
C
= -50mA
- -0.2 I
C
= -10mA, I
B
= -1mA
Collector-emitter saturation voltage
V
CE(sat)
- -0.3
V
I
C
= -50mA, I
B
= -5mA
Base-emitter voltage
V
BE(on)
- -0.75 V I
C
= -10mA, I
B
= -1mA
Transition frequency
f
T
50 - MHz V
CE
= -20V, I
C
= -10mA, f=100MHz
ZTA94
REF.
REF.
A 6.20 6.70 G - 0.10
B 6.70 7.30 H - -
C 3.30 3.70 J 0.25 0.35
D 1.42 1.90 K - -
E 4.50 4.70 L 2.30 REF.
F 0.60 0.82 M 2.90 3.10
SOT-223
Top View
1
2
3
4
A
M
B
D
L
K
F G H J
E
C