2SA844
-0.1A , -55V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
14-Feb-2011 Rev. A Page 1 of 1
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
A
CE
K
F
D
B
G
H
J
Base
Emitte
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain
Low Frequency Amplifier
CLASSIFICATION OF h
FE
Product-Rank 2SA844-C 2SA844-D 2SA844-E
Range 160~320 250~500 400~800
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
-55 V
Collector to Emitter Voltage V
CEO
-55 V
Emitter to Base Voltage V
EBO
-5 V
Collector Current - Continuous I
C
-100 mA
Collector Power Dissipation P
C
300 mW
Thermal Resistance From Junction to Ambient R
θJA
416 °C / W
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit Test condition
Collector to Base Breakdown Voltage V
(BR)CBO
-55 - - V I
C
= -0.01mA, I
E
=0
Collector to Emitter Breakdown Voltage V
(BR)CEO
-55 - - V I
C
= -1mA, I
B
=0
Emitter to Base Breakdown Voltage V
(BR)EBO
-5 - - V I
E
= -0.01mA, I
C
=0
Collector Cut-Off Current I
CBO
- - -0.1 μA V
CB
= -18V, I
E
=0
Emitter Cut-Off Current I
EBO
- - -0.05 μA V
EB
= -2V, I
C
=0
DC Current Gain h
FE
160 - 800 V
CE
= -12V, I
C
= -2mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - -0.5 V I
C
= -10mA, I
B
= -1mA
Base to Emitter Voltage V
BE
- - -0.75 V V
CE
= -12V, I
C
= -2mA
Transition Frequency f
T
- 200 - MHz V
CE
= -12V, I
C
= -2mA
Collector Output Capacitance C
ob
- 2 - pF V
CE
= -10V, I
C
=0, f=1MHz
TO-92
Emitte
Collector
Base
REF.
Millimeter
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70 -
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76