Elektronische Bauelemente
2SA727
-3A, -40V
PNP Silicon General Purpose Transistor
23-May-2013 Rev. A Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
7 2 7
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
High current output up to -3A
Low saturation voltage
MARKING
PACKAGE INFORMATION
Package MPQ Leader Size
TSOP-6 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Collector to Base Voltage V
CBO
-40 V
Collector to Emitter Voltage V
CEO
-30 V
Emitter to Base Voltage V
EBO
-5 V
Collector Currrent I
C
-3
A
Total Power Dissipation @
T
C
=25°C
3
P
D
1.2 W
Thermal Resistance Junction-ambient Max
1
R
θJC
105 °C/W
Junction & Storage Temperature T
J
, T
STG
150, -55 ~ 150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage V
(BR)CBO
-40 - - V I
C
= -100µA, I
E
=0
Collector-emitter breakdown voltage V
(BR)CEO
-30 - - V I
C
= -1mA, I
B
=0
Emitter-base breakdown voltage V
(BR)EBO
-5 - - V I
E
= -10µA, I
C
=0
Collector cut-off current I
CBO
- - -0.1 µA V
CB
= -30V, I
E
=0
Emitter cut-off current I
EBO
- - -0.1 µA V
EB
= -5V, I
C
=0
- -0.15 -0.25 I
C
= -0.5A, I
B
= -5mA
- -0.85 -1 I
C
= -2A, I
B
= -20mA
Collector-emitter saturation voltage
2
V
CE(sat)
- -0.25 -0.5
V
I
C
= -2A, I
B
= -200mA
- -0.8 -1.1 I
C
= -0.5A, I
B
= -5mA
Base-emitter saturation voltage
2
V
BE(sat)
- -1 -1.5
V
I
C
= -2A, I
B
= -200mA
30 - - V
CE
= -2V, I
C
= -20mA
DC current gain
2
h
FE
160 - 320
V
CE
= -2V, I
C
= -1A
Transition frequency f
T
- 80 - MHz
V
CE
= -5V, I
C
= -100mA,
f=100MHz
Collector output capacitance C
ob
- 55 - pF V
CB
= -10V, f=1MHz
NOTE:
1. surface mounted on a 1 inch2 FR-4 board with 2OZ copper. , 167℃/W when mounted on Min. copper pad.
2. The data tested by pulsed , pulse width≦300us , duty cycle ≦2%
3. The power dissipation is limited by 150 ℃junction temperature
REF.
REF.
F 0.30
0.50
TSOP-6
