Any changing of specification will not be informed individual
2SA684
PNP Transistor
http://www.SeCoSGmbH.com
Elektronische Bauelemente
1
2
TO-92L
1. EMITTER
2. COLLECTOR
.
BASE
2
3
1
3
3
FEATURES
∙ Automatic insertion by radial taping possible.
∙ Complementary pair with 2SC1384.
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -60 V
V
CEO
Collector-Emitter Voltage -50 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -Continuous -1 A
P
C
Collector Dissipation 1 W
T
J
, T
stg
Junction and Storage Temperature -55-150
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=-10uA, I
E
=0 -60 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=-2mA, I
B
=0 -50 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-10µA, I
C
=0 -5 V
Collector cut-off current
I
CBO
V
CB
=-20V, I
E
=0 -0.1 µA
h
FE(1)
V
CE
=-10V, I
C
=-500mA 85 340
DC current gain
h
FE(2)
V
CE
=-5V, I
C
=-1A 50
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA -0.2 -0.4 V
Base-emitter saturation voltage
V
BE(sat)
I
C
=-500mA, I
B
=-50mA -0.85 -1.2 V
Transition frequency
f
T
V
CE
=-10V, I
E
=50mA, f=200MHz 200 MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz 20 30 pF
CLASSIFICATION OF h
FE(1)
Rank Q
R S
Range
85-170 120-240 170-340
01-Jun-2002 Rev. A
Page 1 of 3
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
