1998©
Document No. D16146EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA675
PNP SILICON EPITAXIAL TRANSISTOR
FOR DRIVING FLUORESCENT INDICATOR PANNEL
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA675 is a resin sealed mold transistor and is ideal for
dynamic drivers of counting indicator pannel such as fluorescent
indicator pannel due to high voltage.
• High voltage
V
CBO
> −80 V, V
CER
> −80 V
• Excellent linearity for current of DC current gain
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage V
CBO
−80
V
Collector to emitter voltage V
CER
*
−80
V
Emitter to base voltage V
EBO
−5.0
V
Collector current I
C
−100
mA
Total power dissipation P
T
250 mW
Junction temperature T
j
125
°C
Storage temperature T
stg
−55 to +125 °C
*R
BE
= 30 kΩ
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
CBO
V
CB
= –60 V, I
E
= 0
−1.0
µ
A
Emitter cutoff current I
EBO
V
EB
= –3.0 V, I
C
= 0
−1.0
µ
A
DC current gain h
FE1
V
CE
= –3.0 V, I
C
= –1.0 mA 60 120
DC current gain h
FE2
V
CE
= –3.0 V, I
C
= –20 mA 50 120 300
Collector saturation voltage V
CE(sat)
I
C
= –20 mA, I
B
= –1.0 mA
−0.10 −1.50
V
Base saturation voltage V
BE(sat)
I
C
= –20 mA, I
B
= –1.0 mA
−0.74 −1.20
V
Gain bandwidth product f
T
V
CE
= –6.0 V, I
E
= 10 mA 100 170 MHz
Output capacitance C
ob
V
CB
= –10 V, I
E
= 0, f = 1.0 MHz 4.5 10 pF
Storage time t
stg
Refer to the test circuit. 0.5 1.0
µ
s
