Elektronische Bauelemente
2SA673/673A
PNP Silicon
Plastic-Encapsulate Transistor
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
* RoHS Compliant Product
* A suffix of "-C" specifies halogen-free
* Low Frequency Amplifier
* Complementary Pair with 2SC1213
and 2SC1213A
M
FEATURES
01-Jun-2002 Rev. A
Page 1 of 2
2.54
±0.1
(1.27 Typ.)
13
2
1: Emitter
2: Base
3: Collector
1.25
±0.2
4.55
±0.2
3.
5
±0.2
4.5
±0.2
14.3
±0.2
0.46
±0.1
0.43
+0.08
–0.07
TO-92
AXIMUM RATINGS (T
A
=25 C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
* Pulse test.
CLASSIFICATION OF h
FE(1)
Rank
B D
o
10
100-
C
o
V
C
o
C
o
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
2SA673
2SA673A
-35
-50
V
V
CEO
Collector-Emitter Voltage
2SA673
2SA673A
-35
-50
V
V
EBO
Emitter-Base Voltage
-4
I
C
Collector Current -Continuous -500 mA
P
C
Collector Power dissipation 400 mW
T
J
Junction Temperature 150
T
stg
S torage Temperature -55-150
Collector-base breakdown voltage
V
(BR)CBO
I
C
=-10µA,I
E
=0 2SA673
2SA673A
-35
-50
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=-1mA,I
B
=0 2SA673
2SA673A
-35
-50
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-10µA,I
C
=0 -4 V
Collector cut-off current
I
CBO
V
CB
= -20 V, I
E
=0 -0.5 µA
DC current gain h
FE(1)
*
V
CE
=-3V, I
C
= -10mA 60 320
h
FE(2)
V
CE
=-3V, I
C
=-500mA
Collector-emitter saturation voltage V
CEsat
*
I
C
= -150mA, I
B
=-15mA -0.6 V
Base-emitter voltage
V
BE
V
CE
=-3V, I
C
=-10mA -0.64 V
Range
60-120 200 160-320
