Elektronische Bauelemente
2SA562
-0.5A, -35V
PNP Plastic Encapsulated Transistor
14-Jan-2011 Rev. B Page 1 of 2
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
Base
Collector
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Excellent h
FE
Linearity
CLASSIFICATION OF h
FE
Product-Rank
2SA562-O 2SA562-Y
Range
70~140 120~240
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage V
CBO
-35 V
Collector to Emitter Voltage V
CEO
-30 V
Emitter to Base Voltage V
EBO
-5 V
Collector Current - Continuous I
C
-500 mA
Collector Power Dissipation P
C
500 mW
Junction, Storage Temperature T
J
, T
STG
150, -55~150 °C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage V
(BR)CBO
-35 - - V I
C
= -100µA, I
E
= 0A
Collector to Emitter Breakdown Voltage V
(BR)CEO
-30 - - V I
C
= -1mA, I
B
= 0A
Emitter to Base Breakdown Voltage V
(BR)EBO
-5 - - V I
E
= -100µA, I
C
= 0A
Collector Cut-Off Current I
CBO
- - -0.1 µA V
CB
= -35 V, I
E
= 0 A
Emitter Cut-Off Current I
EBO
- - -0.1 µA V
EB
= -5 V, I
C
= 0 mA
DC Current Gain h
FE
70 - 240 V
CE
= -1V, I
C
= -100mA
Collector to Emitter Saturation Voltage V
CE(sat)
- - -0.25
V I
C
= -100mA, I
B
= -10mA
Base to Emitter Voltage V
BE
- - -1 V V
CE
= -1V , I
C
= -100mA
Transition Frequency f
T
- 200 - MHz V
CE
= -6V, I
C
= -20mA
Collector output capacitance C
ob
- 13 - pF V
CB
= -6V, I
E
= 0A, f= 1MHz
TO-92
2
22
2 Collector
3
33
3 Base
REF.
Min.
Max.
