Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
DC/DC Converter Applications
Ordering number:ENN6404
2SA2025
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21000TS (KOTO) TA-2707 No.6404–1/4
Package Dimensions
unit:mm
2033A
[2SA2025]
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall-sized package permitting applied sets to
be made small and slim.
· High allowa ble power dissipation.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Continued on next page.
4.0
0.4
0.5
0.4
0.6
15.0
3.0
1.8
123
2.2
0.4
1.3
1.3
3.0
3.8nom
0.7
0.7
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
51–V
egatloVrettimE-ot-rotcelloCV
OEC
21–V
egatloVesaB-ot-rettimEV
OBE
5–V
tnerruCrotcelloCI
C
3–A
)esluP(tnerruCrotcelloCI
PC
5–A
tnerruCesaBI
B
006–Am
noitapissiDrotcelloCP
C
55.0W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V21–=
E
0=1.0–Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V4–=
C
0=1.0–Aµ
niaGtnerruCCDh
EF
V
EC
I,V2–=
C
Am005–=002065
tcudorPhtdiwdnaB-niaGf
T
V
EC
I,V2–=
C
Am005–=082zHM
ecnaticapaCtuptuOboCV
BC
zHM1=f,V01–=
63Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
EC
)tas(I
C
I,A5.1–=
B
Am03–=011–561–Vm
egatloVnoitarutaSrettimE-ot-esaBV
EB
)tas(I
C
I,A5.1–=
B
Am03–=58.0–2.1–V